WafersCree is the global leader in the manufacture of 4H Silicon Carbide (SiC) substrates, SiC and III-Nitride epitaxial wafers. The Materials Business Unit produces a wide assortment of Conductive and Semi-Insulating products ranging in wafer diameters up to 150.0 mm. This material is the foundation for Cree’s vertically-integrated structure, and is manufactured upon a high-volume platform process which provides our customers the highest degree of material Quality, Supply Assurance, and Economies of Scale. Please download our literature for further reference and product specifications.


Latest News:

Cree Expands Product Offering with Very Low Basal Plane Dislocation 4H Silicon Carbide Epitaxial Wafers (04 Sep 2012) 
Cree, Inc. (Nasdaq: CREE) announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs capable of causing Vf drift as low as < 0.1 cm-2. This low BPD material further demonstrates Cree’s long-standing commitment to continuous improvement and investment in SiC materials technology. (Read Full Press Release)

Cree Introduces 150-mm 4HN Silicon Carbide Epitaxial Wafers (30 Aug 2012) 
Cree, Inc. (Nasdaq: CREE) announces availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers. Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase. (Read Full Press Release)

Product Literature:

- Silicon Carbide Substrate & Epitaxy Product Selection Guide
- Nitride Epitaxy Products & Services Brochure

Materials Product Portfolio:

Supported diameters: 76.2 mm, 100.0 mm, 150.0 mm
SiC substrates: n-type, p-type, HPSI
SiC epitaxy: n-type, p-type, thick epitaxy
GaN epitaxy: GaN, AlN, AlGaN, InGaN, SiN layers
HEMT structures


Sales & Technical Product Support:

For further Sales or Technical Product Support, please email the Materials Sales group at:


Product Applications:

4H-N SiC Substrates/SiC Epitaxy

  • Optoelectronics
  • Power Factor Correction
  • Solar Inverters
  • Industrial Motor Drives

4H-HPSI SiC Substrates/III-Nitride Epitaxy

  • High Power RF
  • Graphene
  • Terahertz
Material Apps